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A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs by Schwantuschke, Dirk; Haupt, Christian; Kiefer, Rudolf; Brückner, Peter; Seelmann-Eggebert, Matthias; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger is a Engineering article available to read on EtoBox.

It is typically read by researchers, students, and practitioners in Engineering.

Author
Schwantuschke, Dirk; Haupt, Christian; Kiefer, Rudolf; Brückner, Peter; Seelmann-Eggebert, Matthias; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger
Publisher
Cambridge University Press; Cambridge University Press (CUP) (ISSN 1759-0787)
Published
2012
Field
Engineering (Physical Sciences)

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Browse all works by Schwantuschke, Dirk; Haupt, Christian; Kiefer, Rudolf; Brückner, Peter; Seelmann-Eggebert, Matthias; Tessmann, Axel; Mikulla, Michael; Kallfass, Ingmar; Quay, Rüdiger