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Can I read 100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation on EtoBox?

100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation by Jun-ichi Nishizawa; Akihiko Murai; Hiroki Makabe; Osamu Ito; Tomoyuki Kimura; Ken Suto; Yutaka Oyama is a Engineering article available to read on EtoBox.

What is 100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation about?

The tunnel injection transit time (TUNNETT) diodes with p þ p þ n þ n À n þ structure were fabricated by liquid phase epitaxy (LPE). About 100 A tunnel junction (p þ n þ ) was successfully prepared by the double impurity diffusion of Ge and S during LPE growth. Continuous wave (CW) oscillation was realized at 51.520 GHz in the V-band cavity with the phase noise of )60 dBc/Hz at 1 kHz bandwidth.

Who reads 100 Å-thick tunnel junction by double impurity doping liquid phase epitaxy for V-band TUNNETT oscillation?

It is typically read by researchers, students, and practitioners in Engineering.

Author
Jun-ichi Nishizawa; Akihiko Murai; Hiroki Makabe; Osamu Ito; Tomoyuki Kimura; Ken Suto; Yutaka Oyama
Publisher
Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)
Published
2004
Language
EN
Field
Engineering (Physical Sciences)

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