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The paper presents a finite-element method (FEM) approach to analyze the thermal effects of defects in silicon-based photovoltaic (PV) cells, specifically focusing on linear edge shunt, hole, and conductive intrusion defects. It models three types of silicon PV cells: monocrystalline, polycrystalline, and amorphous, and discusses the impact of temperature on cell efficiency, highlighting that even a small increase in temperature can lead to significant power loss. The study utilizes Comsol Multiphysics for

Author

Hassan

Language

EN