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About this Engineering article
Complementary metal-oxide-silicon field-effect transistors fabricated in 4-MeV boron-implanted silicon by Terrill, K. W.; Byrne, P. F.; Hu, C.; Cheung, N. W. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Terrill, K. W.; Byrne, P. F.; Hu, C.; Cheung, N. W.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1984
- Field
- Engineering (Physical Sciences)