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Electrical Contacts to p-ZnSe Based on HgSe and ZnTe by S. Einfeldt; M. Behringer; J. Nürnberger; H. Heinke; T. Behr; C. R. Becker; D. Hommel; G. Landwehr is a Physics and Astronomy article available to read on EtoBox.

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## Abstract Low resistance ohmic contacts to p‐ZnSe involving the use of HgSe are studied in detail. HgSe does not form an ohmic contact with p‐ZnSe because of a residual valence band offset at the heterojunction of 0.5 to 0.6 eV. Annealing of HgSe/ZnSe:N does not result in an ohmic contact because a large miscibility gap in Hg~1−__x__~Zn~__x__~Se prevents a HgZn interdiffusion and therefore the formation of a graded heterojunction. The molecular beam epitaxial (MBE) growth of Hg~1−__x__~Zn~__x__~Se does not circumvent this problem because these epitaxial layers suffer from a compositional phase separation due to spinodal demixing during MBE growth. A significant improvement of HgSe based contacts could be achieved by the use of ZnSe~1−__x__~Te~__x__~:N transition layers between HgSe and ZnSe:N. Either by abrupt, graded, or multilayer heterojunctions, very low contact resistivities are obtained. The growth of ZnSe~1−__x__~Te~__x__~:N layers on top of ZnSe:N is shown to reduce the carrier concentration in ZnSe:N by several orders of magnitude. A nitrogen diffusion process is believed to be responsible for this effect.

Who reads Electrical Contacts to p-ZnSe Based on HgSe and ZnTe?

Author

S. Einfeldt; M. Behringer; J. Nürnberger; H. Heinke; T. Behr; C. R. Becker; D. Hommel; G. Landwehr

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley (ISSN 0370-1972)

Published

1995

Language

EN

Field

Physics and Astronomy (Physical Sciences)