About this scholarly article

Characterization of HfOxNy gate dielectrics using a hafnium oxide as target by M. Liu; Q. Fang; G. He; L.Q. Zhu; L.D. Zhang is a scholarly article available to read on EtoBox.

Author

M. Liu; Q. Fang; G. He; L.Q. Zhu; L.D. Zhang

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0169-4332)

Published

2006