About this scholarly article

International Conference onIndium Phosphide and Related Materials, 2003. - High current gain InP/InGaAs heterojunction bipolar transistor with a low resistance compositionally graded base structure by Ouchi, K.; Ohta, H.; Kudo, M.; Mishima, T. is a scholarly article available to read on EtoBox.

Author

Ouchi, K.; Ohta, H.; Kudo, M.; Mishima, T.

Publisher

IEEE

Published

2003