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AlGaN/GaN HEMT Performance Improvement by gurdian sky is a document available to read on EtoBox.

What is AlGaN/GaN HEMT Performance Improvement about?

This document summarizes research on improving the performance of AlGaN/GaN HEMTs through a systematic study using a design of experiment (DoE) approach. The DoE approach evaluated the effects of different ohmic contact annealing environments, surface treatments before silicon nitride passivation, and the placement of silicon nitride passivation in the fabrication process flow. The optimal process flow achieved 6 W/mm output power, 70% power added efficiency, and 15dB gain at S-band for a 0.2 mm device oper

Author
gurdian sky
Language
EN