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About this Engineering article
Removal of hydrogen from the base of carbon-doped In0.49Ga0.51P/GaAs heterojunction bipolar transistors by ex situ annealing and the effects on device characteristics by Hartmann, Q. J.; Hwangbo, H.; Yung, A.; Ahmari, D. A.; Fresina, M. T.; Baker, J. E.; Stillman, G. E. is a Engineering article available to read on EtoBox.
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- Author
- Hartmann, Q. J.; Hwangbo, H.; Yung, A.; Ahmari, D. A.; Fresina, M. T.; Baker, J. E.; Stillman, G. E.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 1996
- Language
- EN
- Field
- Engineering (Physical Sciences)