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About this Engineering article
High-efficient class F GaAs FET amplifiers operating with very low bias voltages for use in mobile telephones at 1.75 GHz by Duvanaud, C.; Dietsche, S.; Pataut, G.; Obregon, J. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Duvanaud, C.; Dietsche, S.; Pataut, G.; Obregon, J.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 1051-8207)
- Published
- 1993
- Field
- Engineering (Physical Sciences)
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