About this scholarly article

2010 International Electron Devices Meeting - A novel low-voltage biasing scheme for double gate FBC achieving 5s retention and 1016 endurance at 85°C by Lu, Z.; Collaert, N.; Aoulaiche, M.; De Wachter, B.; De Keersgieter, A.; Schwarzenbach, W.; Bonnin, O.; Bourdelle, K. K.; Nguyen, B.-Y.; Mazure, C.; Altimime, L.; Jurczak, M. is a scholarly article available to read on EtoBox.

Author

Lu, Z.; Collaert, N.; Aoulaiche, M.; De Wachter, B.; De Keersgieter, A.; Schwarzenbach, W.; Bonnin, O.; Bourdelle, K. K.; Nguyen, B.-Y.; Mazure, C.; Altimime, L.; Jurczak, M.

Publisher

IEEE

Published

2010