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The study investigates the transient behavior of AlGaN–GaN MIS-HEMTs using drain current deep level transient spectroscopy (DLTS), revealing two electron traps and the absence of hole-trap-like positive peaks found in AlGaN–GaN HEMTs. The results indicate that the SiN gate insulator effectively suppresses both gate leakage current and surface-state-related signals, enhancing device performance. The findings suggest that the positive peaks in HEMTs are related to changes in surface state electron populations

Author

avigantait

Language

EN