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About this Materials Science article
Improvement on InGaN-based light emitting diodes using p-GaN layer grown at low temperature in full N 2 environment by Deng, Zhen; Jiang, Yang; Zuo, Peng; Fang, Yutao; Ma, Ziguang; Jia, Haiqiang; Zhou, Junming; Chen, Hong is a Materials Science article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Materials Science.
- Author
- Deng, Zhen; Jiang, Yang; Zuo, Peng; Fang, Yutao; Ma, Ziguang; Jia, Haiqiang; Zhou, Junming; Chen, Hong
- Publisher
- John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Ltd.; Wiley; Wiley - V C H Verlag GmbbH & Co. (ISSN 0031-8965)
- Published
- 2014
- Language
- EN
- Field
- Materials Science (Physical Sciences)