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This document discusses the fabrication and performance of β-Ga2O3 Schottky barrier diodes (FP-SBDs) designed for high-efficiency DC-DC converters. The diodes exhibit a reverse recovery time of 8.8 ns and a breakdown voltage of 467 V, demonstrating competitive efficiency compared to SiC-based converters. The study highlights the potential of β-Ga2O3 in power applications due to its superior characteristics over traditional semiconductor materials.

Author

Deekshi Katta

Language

EN