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About this Engineering article
The growth of In0.5Ga0.5N and InN layers on (111)Si using nanorod intermediate arrays by Cherns, D.; Webster, R.F.; Novikov, S.V.; Foxon, C.T.; Fischer, A.M.; Ponce, F.A. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Cherns, D.; Webster, R.F.; Novikov, S.V.; Foxon, C.T.; Fischer, A.M.; Ponce, F.A.
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)
- Published
- 2013
- Language
- EN
- Field
- Engineering (Physical Sciences)