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Benchmarking of FERAM-Based Memory System by Optimizing Ferroelectric Device Model by 21EC011 HEMA PRIYA.K is a document available to read on EtoBox.

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This document presents a framework for optimizing ferroelectric random access memory (FERAM) as an alternative to dynamic random access memory (DRAM), focusing on design technology co-optimization (DTCO) to enhance performance and reduce energy consumption. The study demonstrates that using FERAM can achieve an average improvement of over 14% in instructions per cycle and a 21% reduction in energy consumption by optimizing device characteristics and circuit architecture. The findings highlight the advantage

Author

21EC011 HEMA PRIYA.K

Language

EN