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Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS by Rahul Pendurthi; Darsith Jayachandran; Azimkhan Kozhakhmetov; Nicholas Trainor; Joshua A. Robinson; Joan M. Redwing; Saptarshi Das is a Engineering article available to read on EtoBox.

What is Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS about?

## Abstract Atomically thin, 2D, and semiconducting transition metal dichalcogenides (TMDs) are seen as potential candidates for complementary metal oxide semiconductor (CMOS) technology in future nodes. While high‐performance field effect transistors (FETs), logic gates, and integrated circuits (ICs) made from n‐type TMDs such as MoS~2~ and WS~2~ grown at wafer scale have been demonstrated, realizing CMOS electronics necessitates integration of large area p‐type semiconductors. Furthermore, the physical separation of memory and logic is a bottleneck of the existing CMOS technology and must be overcome to reduce the energy burden for computation. In this article, the existing limitations are overcome and for the first time, a heterogeneous integration of large area grown n‐type MoS~2~ and p‐type vanadium doped WSe~2~ FETs with non‐volatile and analog memory storage capabilities to achieve a non–von Neumann 2D CMOS platform is introduced. This manufacturing process flow allows for precise positioning of n‐type and p‐type FETs, which is critical for any IC development. Inverters and a simplified 2‐input‐1‐output multiplexers and neuromorphic computing primitives such as Gaussian, sig

Who reads Heterogeneous Integration of Atomically Thin Semiconductors for Non‐von Neumann CMOS?

Author

Rahul Pendurthi; Darsith Jayachandran; Azimkhan Kozhakhmetov; Nicholas Trainor; Joshua A. Robinson; Joan M. Redwing; Saptarshi Das

Publisher

Wiley

Published

2022

Language

EN

Field

Engineering (Physical Sciences)