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About this Engineering article
High-${k}$ HfO2-Based AlGaN/GaN MIS-HEMTs With Y2O3 Interfacial Layer for High Gate Controllability and Interface Quality by Shi, Ya-Ting ;Lu, Hai ;Xu, Wei-Zong ;Zeng, Chang-Kun ;Ren, Fang-Fang ;Ye, Jian-Dong ;Zhou, Dong ;Chen, Dun-Jun ;Zhang, Rong ;Zheng, Youdou is a Engineering article available to read on EtoBox.
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- Author
- Shi, Ya-Ting ;Lu, Hai ;Xu, Wei-Zong ;Zeng, Chang-Kun ;Ren, Fang-Fang ;Ye, Jian-Dong ;Zhou, Dong ;Chen, Dun-Jun ;Zhang, Rong ;Zheng, Youdou
- Publisher
- Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers Inc.; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 2168-6734)
- Published
- 2020
- Field
- Engineering (Physical Sciences)