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Study of Etched Ion Track Profiles in Silicon Dioxide Membrane by W.M. Zhang; J. Li; Y.D. Liu; W. Guo; A.F. Liang; J.M. Xue; Y.G. Wang is a Physics and Astronomy article available to read on EtoBox.

What is Study of Etched Ion Track Profiles in Silicon Dioxide Membrane about?

A method was developed to investigate the profiles of etched ion tracks in silicon dioxide membranes that are thermally grown on silicon (1 0 0) substrates. These membranes were irradiated with 9 MeV 63 Cu 5+ , 45 MeV 80 Br 9+ or 76.5 MeV 80 Br 16+ ions. The induced latent ion tracks were then selectively over-etched in aqueous 4% HF till reaching the silicon substrates. We used both the top and bottom diameters of the over-etched track images observed by SEM as well as the thickness of the residual membrane to determine the track profile. By analyzing its contour line, the etching velocity v t of the latent track can be derived as well. The experimental results are consistent with the theoretical calculations.

Who reads Study of Etched Ion Track Profiles in Silicon Dioxide Membrane?

Author

W.M. Zhang; J. Li; Y.D. Liu; W. Guo; A.F. Liang; J.M. Xue; Y.G. Wang

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 1350-4487)

Published

2008

Language

EN

Field

Physics and Astronomy (Physical Sciences)