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Effect of Post-deposition Treatments on the Hydrogenation of Hot-wire Deposited Amorphous Silicon Films by K. F. Feenstra; P. F. A. Alkemade; E. Algra; R. E. I. Schropp; W. F. van der Weg is a Engineering article available to read on EtoBox.

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The eect of dierent post-deposition treatments on the structure of Hot-Wire (HW) deposited intrinsic a-Si:H thin ®lms is investigated. These treatments are applied in order to rehydrogenate the top region of the ®lm, which, due to the high deposition temperatures of these ®lms, becomes depleted of hydrogen. Using secondary ion mass spectroscopy (SIMS) for measurement of the hydrogen pro®les and Raman spectroscopy measurements to investigate the hydrogen bonding con®guration at the surface, we were able to determine the eect of the dierent treatments on the ®lms. We show that the hydrogen pro®le in the subsurface region is not a result of the out-diusion of hydrogen while the sample is cooled down after the deposition, but develops during the growth of the ®lm. The most eective bulk rehydrogenation is achieved with an atomic hydrogen treatment, for which we determined a diusion coecient for atomic hydrogen of 7 Â 10 À14 cm 2 s À1 at 4308C. Rapid cooling and a hydrogen plasma treatment are shown to result in an improved top surface hydrogenation of the intrinsic ®lm. Despite the dierences in top surface hydrogenation of the intrinsic ®lms, application of the treatments in real n-i-p

Who reads Effect of Post-deposition Treatments on the Hydrogenation of Hot-wire Deposited Amorphous Silicon Films?

Author

K. F. Feenstra; P. F. A. Alkemade; E. Algra; R. E. I. Schropp; W. F. van der Weg

Publisher

John Wiley and Sons; Wiley (John Wiley & Sons); John Wiley & Sons Inc.; Wiley (ISSN 1062-7995)

Published

1999

Language

EN

Field

Engineering (Physical Sciences)