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About this scholarly article
2006 Symposium on VLSI Technology, 2006. Digest of Technical Papers. - A Raised Source/Drain Extension pFET on Si [110] Realized by In-situ Doped Selective Epitaxy Technology by Wang, J.; Kikuchi, Y.; Tateshita, Y.; Kato, T.; Kataoka, T.; Hirano, T.; Nagano, K.; Ikuta, T.; Miyanami, Y.; Fujita, S.; Hiyama, S.; Yamamoto, R.; Kanda, S.; Yamakawa, S.; Kimura, T.; Kugimiya, K.; Yamagishi, N.; Tagawa, Y.; Kamide, Y.; Iwamoto, H.; Ohno, T.; Saito, M.; Ka, . is a scholarly article available to read on EtoBox.
- Author
- Wang, J.; Kikuchi, Y.; Tateshita, Y.; Kato, T.; Kataoka, T.; Hirano, T.; Nagano, K.; Ikuta, T.; Miyanami, Y.; Fujita, S.; Hiyama, S.; Yamamoto, R.; Kanda, S.; Yamakawa, S.; Kimura, T.; Kugimiya, K.; Yamagishi, N.; Tagawa, Y.; Kamide, Y.; Iwamoto, H.; Ohno, T.; Saito, M.; Ka, .
- Publisher
- IEEE
- Published
- 2006
- Language
- EN