About this scholarly article

Compound Semiconductors 1997. Proceedings of the IEEE Twenty-Fourth International Symposium on Compound Semiconductors - Electronic properties of MBE grown GaAs homointerfaces fabricated using the As cap deposition/removal technique by Passlack, M.; Droopad, R.; Yu, Z.; Overgaard, C.; Bowers, B.; Abrokwah, J. is a scholarly article available to read on EtoBox.

Author

Passlack, M.; Droopad, R.; Yu, Z.; Overgaard, C.; Bowers, B.; Abrokwah, J.

Publisher

IEEE

Published

1997