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This document presents a D-band power amplifier designed in a 0.13 µm SiGe:C BiCMOS technology, achieving 7 dBm output power at 0.14 THz. The amplifier employs a two-stage differential cascode topology with transformer coupling to enhance performance, addressing limitations from parasitic effects. Measurement results indicate a P1dB of 0.6 dBm and a saturated power of 7.1 dBm, demonstrating a higher gain compared to other existing designs.

Author

jayaajaykumarsadhu

Language

EN