About this Engineering article
Optoelectronic devices based on lateral p-n junctions fabricated by molecular-beam epitaxy growth of silicon-doped GaAs on patterned (311)A-oriented substrates by Vaccaro, P.O.; Fujita, K. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Vaccaro, P.O.; Fujita, K.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9197)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)