About this scholarly article

2009 IEEE International Electron Devices Meeting (IEDM) - Simulation study of switching mechanism in carbon-based resistive memory with molecular dynamics and Extended Hückel Theory-based NEGF method by Guan, Ximeng; Yu He, ; Liang Zhao, ; Jinyu Zhang, ; Yan Wang, ; He Qian, ; Yu, Zhiping is a scholarly article available to read on EtoBox.

Author

Guan, Ximeng; Yu He, ; Liang Zhao, ; Jinyu Zhang, ; Yan Wang, ; He Qian, ; Yu, Zhiping

Publisher

IEEE

Published

2009