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Back Barrier Induced Time Dependence by chongyiliang.st12 is a document available to read on EtoBox.
What is Back Barrier Induced Time Dependence about?
The document discusses a mechanism for managing charge movement in back barrier induced time-dependent degradation in GaN HEMTs. It highlights the importance of understanding the time-dependent behavior of GaN devices under various conditions to improve reliability and performance. The findings suggest that charge movement and degradation can be effectively monitored and mitigated through specific design and operational strategies.
- Author
- chongyiliang.st12
- Language
- EN