About this Physics and Astronomy article
Molecular-beam-epitaxial growth of III-VI layered semiconductor GaSe on amorphous SiO2 by Kambe, N. is a Physics and Astronomy article available to read on EtoBox.
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- Author
- Kambe, N.
- Publisher
- American Institute of Physics; AIP Publishing; Publons (ISSN 0021-8979)
- Published
- 1991
- Field
- Physics and Astronomy (Physical Sciences)