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About this Engineering article
AlGaN–GaN–AlInGaN induced base transistor by Shur, M. S.; Bykhovski, A. D.; Gaska, R.; Khan, M. A.; Yang, J. W. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Shur, M. S.; Bykhovski, A. D.; Gaska, R.; Khan, M. A.; Yang, J. W.
- Publisher
- American Institute of Physics; AIP Publishing (ISSN 0003-6951)
- Published
- 2000
- Language
- EN
- Field
- Engineering (Physical Sciences)
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