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Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2 by Lee, Woojoo; Lin, Yi; Lu, Li-Shuan; Chueh, Wei-Chen; Liu, Mengke; Li, Xiaoqin; Chang, Wen-Hao; Kaindl, Robert A.; Shih, Chih-Kang is a scholarly article available to read on EtoBox.

What is Momentum resolved ground/excited states and the ultra-fast excited state dynamics of monolayer MoS2 about?

The emergence of transition metal dichalcogenides (TMD) as crystalline atomically thin semiconductors has created a tremendous amount of scientific and technological interest. Many novel device concepts have been proposed and realized (1-3). Nonetheless, progress in k-space investigations of ground/excited state electronic structures has been slow due to the challenge to create large scale, laterally homogeneous samples. Taking advantage of recent advancements in chemical vapor deposition, here we create a wafer-size MoS2 monolayer with well-aligned lateral orientation for advanced electron spectroscopy studies (4-6). Low energy electron diffraction and scanning tunneling microscopy (STM) demonstrate atomically clean surfaces with in-plane crystalline orientation. The ground state and excited state electronic structures are probed using scanning tunneling spectroscopy (STS), angle-resolved photoemission (ARPES) and time-resolved (tr-)ARPES. In addition to mapping out the momentum-space quasiparticle band structure in the valence and conduction bands, we unveil ultrafast excited state dynamics, including inter- and intra-valley carrier scattering and a rapid downward energy shift by

Author

Lee, Woojoo; Lin, Yi; Lu, Li-Shuan; Chueh, Wei-Chen; Liu, Mengke; Li, Xiaoqin; Chang, Wen-Hao; Kaindl, Robert A.; Shih, Chih-Kang

Published

2020

Language

EN