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F630 N-Channel MOSFET Datasheet by Lâm Bá Nhã is a document available to read on EtoBox.

What is F630 N-Channel MOSFET Datasheet about?

This document provides specifications for an N-channel enhancement mode power MOSFET. Key details include: - It has a maximum drain-source voltage of 200V, on-resistance as low as 0.34 ohms, and continuous drain current of 9A. - Features include fast switching, low gate charge, single pulse avalanche capability, and RoHS compliance. - Applications include power supplies, electronic ballasts, UPS systems, and inverters. - Electrical characteristics including maximum ratings, thermal characteristics, on/of

Author

Lâm Bá Nhã

Language

EN