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About this Engineering article
Effects of p-type doping and electric field on electronic band structure and optical properties of GaNAsBi/GaAs quantum well detectors operating at 1.55μm by I. Guizani, ; Bilel, C.; Habchi, M.M.; Rebey, A.; El Jani, B. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- I. Guizani, ; Bilel, C.; Habchi, M.M.; Rebey, A.; El Jani, B.
- Publisher
- Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
- Published
- 2017
- Language
- EN
- Field
- Engineering (Physical Sciences)
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