About this document

Abstract by Angada Sachid is a document available to read on EtoBox.

As CMOS technology scales below 22nm, new challenges arise for logic and SRAM performance. New device structures and materials are being explored to improve drive current and reduce leakage. 3D integration approaches such as FinFETs and nanowire transistors show promise to continue Moore

Author

Angada Sachid

Language

EN