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Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure by Can-Ming Hu; Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi is a scholarly article available to read on EtoBox.

What is Evidence of the Coulomb gap observed in an InAs inserted In0.53Ga0.47As/In0.52Al0.48As heterostructure about?

We report studies of the in-plane magneto-transport properties of a 2DEG in an InAs inserted InGaAs=InAlAs heterostructure with a DC bias voltage. Temperature dependent zero-bias reduction of the longitudinal resistance was observed when high magnetic ÿeld is applied along the sample growth direction. We interpret the observed resistance reduction as the result of a Coulomb gap existing at the Fermi level of the 2DEG.

Author

Can-Ming Hu; Junsaku Nitta; Tatsushi Akazaki; Hideaki Takayanagi

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1386-9477)

Published

2000

Language

EN