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About this Engineering article
Investigation of GaAs/(Al,Ga)As multiple quantum wells grown on Ge and Si substrates by molecular-beam epitaxy: U K Reddy et al, J appl Phys, 62, 1987, 4858–4862 is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Publisher
- Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0042-207X)
- Published
- 1989
- Language
- EN
- Field
- Engineering (Physical Sciences)