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Design considerations for integrated inductors in conventional CMOS technologies by Chris Smithhisler; Ki-Hong Kim; John Colvin; Yo-Chnol Ho; Kenneth O is a Engineering article available to read on EtoBox.

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AbstractÐThe skin and proximity eects, substrate dependencies and other factors which modify integrated inductor characteristics in silicon technologies were examined using quasi-static electromagnetic simulations and characterization studies. Results were used to understand the impact of constraints and opportunities for implementing inductors in silicon technologies. It was shown that wider metal lines are more aected by the skin eect and, at frequencies greater than H4 GHz, the eectiveness of improving quality factors (Q) by widening metal lines is degraded. An inductor composed of three metal layers shunted over an entire length of the inductor trace and another with three metal layers shunted only at their ends were characterized. Inductances of the structures were the same, while the resistance was surprisingly lower for the latter structure. It was demonstrated that parasitic metal-to-substrate capacitances of inductors can be reduced by using an underlying biased n-well. Two-dimensional simulations show that frequency dependencies of inductance for inductors fabricated on p-substrates (20 O cm) and those fabricated on p on p + (0.01 O cm) substrates are small and are the sa

Who reads Design considerations for integrated inductors in conventional CMOS technologies?

Author

Chris Smithhisler; Ki-Hong Kim; John Colvin; Yo-Chnol Ho; Kenneth O

Publisher

Elsevier Science; Elsevier ; Elsevier Ltd.; Elsevier BV (ISSN 0038-1101)

Published

1998

Language

EN

Field

Engineering (Physical Sciences)