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As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy by Tsukamoto, Shiro; Pristovsek, Markus; Orr, Bradford G.; Ohtake, Akihiro; Bell, Gavin R.; Koguchi, Nobuyuki is a scholarly article available to read on EtoBox.

What is As-rich GaAs(001) surfaces observed during As4-irradition by scanning tunneling microscopy about?

As-rich GaAs (001) surfaces are successfully observed during As4-irradition by a system in which scanning tunneling microscopy (STM) and molecular beam epitaxy can be performed simultaneously. With a substrate temperature of 440 C and an As4 partial pressure of 2x10-6 torr, reflection high energy electron diffraction patterns and reflectance anisotropy spectra confirm a c(4x4) As-stabilized surface. STM images clearly show alteration of the surface reconstructions while scanning. It is postulated that continual attachment / detachment of As molecules to and from the surface produces the observed dynamic behavior.

Author

Tsukamoto, Shiro; Pristovsek, Markus; Orr, Bradford G.; Ohtake, Akihiro; Bell, Gavin R.; Koguchi, Nobuyuki

Published

2002

Language

EN