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About this Engineering article
Metastable charge-trapping effect in SOI nMOSTs at 4.2 K by Simoen, E; Gao, M -H; Colinge, J -P; Claeys, C is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Simoen, E; Gao, M -H; Colinge, J -P; Claeys, C
- Publisher
- Institute of Physics; IOP Publishing; Institute of Physics Publishing (ISSN 0268-1242)
- Published
- 1993
- Field
- Engineering (Physical Sciences)
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