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Temperature effect on structural properties of boron oxide thin films deposited by MOCVD method by O.M. Moon; B.-C. Kang; S.-B. Lee; J.-H. Boo is a Engineering article available to read on EtoBox.

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Boron oxide (B 2 O 3 ) thin films were deposited on Si (100) substrates using a single source precursor by thermal MOCVD method under a pressure of 150 mTorr and the temperature range of 500 -650 jC. Tri-isopropyl borate ([(CH 3 ) 2 CHO] 3 B) was used as a precursor without carrier and bubbler gases. In this study, the structural properties of boron oxide thin films with various deposition temperatures were mainly investigated. A highly oriented cubic B 2 O 3 thin film in the [310] direction was grown on Si (100) substrate at 600 -650 jC. XPS analysis shows that the chemical compositions of as-grown film at 500 -600 jC have a non-stoichiometric value as B 2 O 3 + x , while those of films grown at above 600 jC have a stoichiometric value as B 2 O 3 film. From FT-IR and contact angle analysis, we realized that crystallinity of the deposited films was decreased by B -O -H bond formation. We also observed the surface morphology, grain size, and film thickness of the as-grown films by SEM. The average grain sizes and film thickness are varied, in the range of 10 -40 and 200 -500 nm, depending on deposition temperature. With increasing deposition temperature, the grain size as well as fi

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Author

O.M. Moon; B.-C. Kang; S.-B. Lee; J.-H. Boo

Publisher

Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)

Published

2004

Language

EN

Field

Engineering (Physical Sciences)