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AlN thin films prepared by ion beam induced chemical vapour deposition by J.C Sánchez-López; L Contreras; A Fernández; A.R González-Elipe; J.M Martin; B Vacher is a Engineering article available to read on EtoBox.

What is AlN thin films prepared by ion beam induced chemical vapour deposition about?

q ## Ž . AlN thin films have been prepared by bombardment of a suitable substrate with a beam of accelerated N ions 400 eV while a flow 2 of an organometallic precursor is directed onto its surface. This procedure has resulted in very compact and dense films of AlN obtained at room temperature. Since the films were amorphous by XRD, the formation of an AlN phase has been confirmed by different spectroscopies, while the morphology and optical properties of the films have been characterized by electron microscopy and ultraviolet-visible absorption. q 1998 Elsevier Science S.A.

Who reads AlN thin films prepared by ion beam induced chemical vapour deposition?

It is typically read by researchers, students, and practitioners in Engineering.

Author
J.C Sánchez-López; L Contreras; A Fernández; A.R González-Elipe; J.M Martin; B Vacher
Publisher
Elsevier Science; Elsevier ; Elsevier Sequoia; Elsevier BV (ISSN 0040-6090)
Published
1998
Language
EN
Field
Engineering (Physical Sciences)

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