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Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substrates by P.A. Troubenko; V.I. Kozlovsky; T. Yao; Y.V. Korostelin; V.V. Roddatis is a scholarly article available to read on EtoBox.

What is Homoepitaxial distributed Bragg structures grown by MBE on ZnSe substrates about?

ZnCdSe/ZnMgSe and ZnSe/ZnMgBeSe distributed Bragg reflectors have been grown on ZnSe (1 0 0) substrates by molecular beam epitaxy. Optical and structural properties were investigated. A calculation was applied to the design of II-VI DBRs on ZnSe substrates. The comparison of theoretical and experimental reflectivity spectra proposes that the discrepancy of maximum reflectance is related to the heterointerface roughness in the non-pseudomorphic system. For the ZnCdSe/ZnMgSe system, DBRs contained 10.5 and 20 stacks of alternated quarter-wavelength layers were obtained. The maximum reflectance was around 80% at 560 nm for 20 pairs of Zn 0.86 Cd 0.14 Se/Zn 0.79 Mg 0.21 Se. The ZnSe/ZnMgBeSe DBR structures show the abrupt heterointerface and good smoothness of surface. The 12 pairs of ZnSe/Zn 0.72 Mg 0.21 Be 0.07 Se quarter-wavelength layers were deposited and maximum reflectance was at 605 nm. The peak position and reflectance correlate well with theoretical prediction.

Author

P.A. Troubenko; V.I. Kozlovsky; T. Yao; Y.V. Korostelin; V.V. Roddatis

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0022-0248)

Published

2001

Language

EN