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Heterostructures overgrown on GaAs corner substrates by D Schuh; M Grayson; M Bichler; G Abstreiter is a Physics and Astronomy article available to read on EtoBox.

What is Heterostructures overgrown on GaAs corner substrates about?

By choosing suitable crystal facets we are able to epitaxially overgrow a precleaved corner-substrate. We are using GaAs (1 1 0)-like facets and growth conditions such that no accumulation or depletion of deposited material near the corner is observed, avoiding morphological changes at the corner during the growth process. So we achieve high-quality layer growth across the corner. With this technique we demonstrate a new type of quantum confinement structure consisting of a GaAs/AlGaAs heterostructure overgrown on top of this precleaved corner-substrate.

Who reads Heterostructures overgrown on GaAs corner substrates?

Author

D Schuh; M Grayson; M Bichler; G Abstreiter

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 1386-9477)

Published

2004

Language

EN

Field

Physics and Astronomy (Physical Sciences)