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Doping Graphene: Band Gap Effects by johnsonwat22 is a document available to read on EtoBox.
This study investigates the effects of chemical doping on monolayer and bilayer graphene using aluminium, silicon, phosphorus, and sulfur. It finds that silicon-doped graphene has the lowest formation energy but remains semimetallic, while phosphorus-doped graphene exhibits a magnetic moment and a band gap of 0.67 eV. The research highlights the potential of phosphorus for creating stable interlayer bonds and tunable band gaps in graphene, making it a promising candidate for electronic applications.
- Author
- johnsonwat22
- Language
- EN