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About this Physics and Astronomy article
Investigation of deep levels of AsGa and GaAs antistructural defects and InAs and SbGa heteroantistructural defects in GaAs using a 4×4×4 expanded unit cell technique by S. N. Grinyaev; V. A. Chaldyshev is a Physics and Astronomy article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Physics and Astronomy.
- Author
- S. N. Grinyaev; V. A. Chaldyshev
- Publisher
- Springer; Springer-Verlag; Springer New York LLC; Consultants Bureau; Springer Science and Business Media LLC; Society for Mining, Metallurgy and Exploration Inc. (ISSN 1573-9228)
- Published
- 1996
- Field
- Physics and Astronomy (Physical Sciences)