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This document discusses the impact of gate oxide processes on low frequency noise, particularly Random Telegram Signal (RTS), in 3D stacked CMOS Image Sensors (CIS). It highlights the optimization of top-tier devices to improve noise performance without affecting bottom-tier devices, identifying specific gate oxide processes (FUR A, FUR B, and RTO C) as beneficial for reducing RTS in Source Follower devices. The study concludes that while intrinsic defect density and RTS noise are not always correlated, the

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jei248267

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EN