About this scholarly article

2011 International Reliability Physics Symposium - Investigation of multistage linear region drain current degradation and gate-oxide breakdown under hot-carrier stress in BCD HV PMOS by Huang, Yu-Hui; Shih, J.R.; Liu, C.C.; Lee, Y.-H.; Ranjan, R.; Chiang, Puo-Yu; Ho, Dah-Chuen; Wu, Kenneth is a scholarly article available to read on EtoBox.

Author

Huang, Yu-Hui; Shih, J.R.; Liu, C.C.; Lee, Y.-H.; Ranjan, R.; Chiang, Puo-Yu; Ho, Dah-Chuen; Wu, Kenneth

Publisher

IEEE

Published

2011

Language

EN