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About this Engineering article
Short-Term Anneal of 30-MeV Electron Damage in High-Purity n-Type Silicon by Mallon, C. E.; Naber, J. A. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Mallon, C. E.; Naber, J. A.
- Publisher
- IEEE; Institute of Electrical and Electronics Engineers; Institute of Electrical and Electronics Engineers (IEEE) (ISSN 0018-9499)
- Published
- 1970
- Field
- Engineering (Physical Sciences)