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Effects of Gd and Sm doping on the electronic structure and the superconductivity of (Ln = Gd and Sm) by Shaoqin Ke; Hongshun Yang; Xiang Yi Xu; ChengHai Sun is a Physics and Astronomy article available to read on EtoBox.

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The effects of Gd and Sm substitution on the Nd 1.85-x Ln x Ce 0.15 Cu 4±δ (Ln = Gd and Sm) single crystals have been studied by the X-ray-photoelectron spectroscopy (XPS) and resistivity measurements. It is found that such doping nominally does not change the doped carrier density, which is supported by a constant result of the (I S /I M ). Gd doping leads to a weakness in the density of states at the Fermi level for superconducting Nd 1.85-x Gd x Ce 0.15 Cu 4±δ , while this phenomenon is not observed for Nd 1.85-x Sm x Ce 0.15 Cu 4±δ . This could have been resulted from the fact that Gd doping induces more localization than Sm doping does, and more localization may result in the suppression of T C for Gd doping and this has been observed with the resistivity measurements.

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Author

Shaoqin Ke; Hongshun Yang; Xiang Yi Xu; ChengHai Sun

Publisher

Elsevier Science; Elsevier ; Elsevier BV (ISSN 0038-1098)

Published

2010

Language

EN

Field

Physics and Astronomy (Physical Sciences)