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About this Engineering article
GaAlAs-GaAs ballistic hetero-junction bipolar transistor by Ankri, D.; Eastman, L.F. is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Ankri, D.; Eastman, L.F.
- Publisher
- The Institution of Electrical Engineers; Institution of Electrical Engineers; Institute of Electrical Engineers; Institution of Engineering and Technology (IET) (ISSN 0013-5194)
- Published
- 1982
- Language
- EN
- Field
- Engineering (Physical Sciences)