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About this Engineering article
Bias dependence of PBTI degradation mechanism in metal-oxide-semiconductor field effect transistors with La-incorporated hafnium-based dielectric by Tae-Young Jang; Dong-Hyoub Kim; Jungwoo Kim; Jun Suk Chang; Jae Kyeong Jeong; Yoon-Uk Heo; Young-Ki Kim; Changhwan Choi; Hokyung Park; Rino Choi is a Engineering article available to read on EtoBox.
It is typically read by researchers, students, and practitioners in Engineering.
- Author
- Tae-Young Jang; Dong-Hyoub Kim; Jungwoo Kim; Jun Suk Chang; Jae Kyeong Jeong; Yoon-Uk Heo; Young-Ki Kim; Changhwan Choi; Hokyung Park; Rino Choi
- Publisher
- Elsevier Science; Elsevier ; Elsevier BV (ISSN 0167-9317)
- Published
- 2011
- Language
- EN
- Field
- Engineering (Physical Sciences)