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Atomic Layer Deposition (ALD) is a technique for applying thin films with atomic scale precision, utilizing a self-limiting process that separates precursor materials during reactions. Developed in 1974, ALD has applications in semiconductor industries for producing high-quality dielectric layers and is characterized by precise thickness control through sequential gas pulses. Key applications include high-K dielectrics for CMOS, semiconductor memory, and deposition in porous structures.

Author

mpraginvihaas

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EN